iindaba

Itekhnoloji yokusika intambo yedayimani ikwabizwa ngokuba yitekhnoloji yokudibanisa abrasive cut.Kukusetyenziswa kwe-electroplating okanye indlela yokudibanisa i-resin ye-diamond abrasive edityanisiweyo phezu kocingo lwensimbi, ucingo lwedayimane olusebenza ngokuthe ngqo kumphezulu wentonga ye-silicon okanye i-silicon ingot ukuvelisa ukugaya, ukufezekisa umphumo wokusika.Ukusika ucingo lwedayimani kuneempawu zesantya sokusika ngokukhawuleza, ukuchaneka okuphezulu kunye nokulahlekelwa kwezinto eziphantsi.

Okwangoku, imarike yekristali enye ye-diamond wire cut silicon wafer yamkelwe ngokupheleleyo, kodwa idibene nayo kwinkqubo yokunyuswa, phakathi kwayo i-velvet emhlophe yeyona ngxaki ixhaphakileyo.Ngokujonga oku, eli phepha lijolise kwindlela yokuthintela ukusika i-diamond wire monocrystalline silicon wafer velvet white problem.

Inkqubo yokucoca i-diamond wire yokusika i-monocrystalline silicon wafer kukususa isicwecwe sesilicon esisikwe ngesixhobo somatshini wocingo ukusuka kwipleyiti yeresin, ukususa umtya werabha, kwaye ucoce iwafer yesilicon.Izixhobo zokucoca ziyi-pre-clean machine (umatshini we-degumming) kunye nomatshini wokucoca.Inkqubo ephambili yokucoca umatshini wokucoca kwangaphambili kukuba: ukutya-spray-spray-ultrasonic cleaning-degumming-clean water rinsing-underfeeding.Inkqubo ephambili yokucoca umatshini wokucoca kukuba: ukutya-amanzi ahlambulukileyo ahlanjululwayo-amanzi ahlambulukileyo-amanzi ahlambulukileyo-ukuhlamba i-alkali yokuhlamba-i-alkali yokuhlamba-i-alkali yokuhlamba amanzi-amanzi ahlambulukileyo ahlanjululwayo-pre-dehydration (ukuphakamisa ngokukhawuleza) -ukondla-ukutya.

Umgaqo-siseko wokwenza i-velvet ye-crystal eyodwa

I-Monocrystalline silicon wafer luphawu lwe-anisotropic corrosion ye-monocrystalline silicon wafer.Umgaqo-nkqubo wokusabela yile equation yekhemikhali elandelayo:

Si + 2NaOH + H2O = Na2SiO3 + 2H2↑

Eyona nto, inkqubo yokwakheka kwe-suede yile: isisombululo se-NaOH sesantya sokutya esahlukileyo somphezulu wekristale eyahlukileyo, (100) isantya sokutya komphezulu kune- (111), ke (100) ukuya kwisiqwenga sesilicone se-monocrystalline emva kokuhlwa kwe-anisotropic, ekugqibeleni senziwa kumphezulu ukuze (111) ikhowuni enamacala amane, oko kukuthi “iphiramidi” isakhiwo (njengoko kubonisiwe kumfanekiso woku-1).Emva kokuba ulwakhiwo lwenziwe, xa ukukhanya kusenzeka kwithambeka lephiramidi kwi-Angle ethile, ukukhanya kuya kubonakaliswa kwithambeka kwenye i-Angle, yenze i-absorption yesibini okanye ngaphezulu, ngaloo ndlela inciphisa ukubonakaliswa komphezulu we-silicon wafer. , oko kukuthi, umphumo womgibe wokukhanya (jonga umfanekiso 2).Okungcono ubungakanani kunye nokufana kwesakhiwo "sephiramidi", isiphumo esicacileyo somgibe, kunye nezantsi i-emitrate yomphezulu we-silicon wafer.

Umzobo 1: I-Micromorphology ye-monocrystalline silicon wafer emva kokuveliswa kwe-alkali

Umzobo 2: Umgaqo womgibe wokukhanya wesakhiwo "sephiramidi".

Uhlalutyo lwe-crystal eyodwa emhlophe

Ngokuskena i-electron microscope kwi-silicon wafer emhlophe, kwafunyaniswa ukuba i-microstructure yephiramidi ye-wafer emhlophe kule ndawo yayingenziwanga, kwaye umphezulu wawubonakala unomaleko wentsalela "ye-waxy", ngelixa isakhiwo sephiramidi ye-suede. kwindawo emhlophe ye-silicon wafer efanayo yenziwe ngcono (jonga umfanekiso 3).Ukuba kukho iintsalela kumphezulu we-silicon wafer ye-monocrystalline, umphezulu uya kuba nendawo eshiyekileyo "yephiramidi" ubungakanani besakhiwo kunye nokuveliswa okufanayo kunye nesiphumo sendawo yesiqhelo ayanelanga, okukhokelela ekubonakalisweni komphezulu wevelvethi okushiyekileyo kuphezulu kunommandla wesiqhelo. indawo ene-reflection ephezulu xa kuthelekiswa nommandla oqhelekileyo kumbono obonakaliswe njengomhlophe.Njengoko kunokubonwa kwimilo yokusabalalisa kwendawo emhlophe, akusiyo imo eqhelekileyo okanye eqhelekileyo kwindawo enkulu, kodwa kuphela kwiindawo zendawo.Kufuneka ukuba ungcoliseko lwendawo phezu komphezulu we-silicon wafer awukacocwa, okanye imeko yomphezulu we-silicon wafer ibangelwa kungcoliseko lwesibini.

Umzobo 3: Uthelekiso lolwahlulo lwemimandla ye-microstructure kwi-velvet white silicon wafers

Umphezulu wedayimane yokusika i-silicon wafer igudileyo kwaye umonakalo uncinci (njengoko kubonisiwe kuMfanekiso 4).Xa kuthelekiswa nodaka lwesilicon wafer, isantya sokusabela kwealkali kunye nocingo lwedayimane lokusika i-silicon wafer umphezulu uyacotha kunelo lodaka lokusika i-silicon wafer ye-monocrystalline, ngoko ke impembelelo yeentsalela zomhlaba kwisiphumo sevelvet ibonakala ngakumbi.

Umzobo 4: (A) Umphezulu wemicrograph yodaka olusikiweyo wesilicon wafer (B) umphezulu micrograph yocingo lwedayimani olusikwe sililica wafer

Owona mthombo uyintsalela yedayimani yocingo olusikiweyo lwesilicon yangaphezulu

(1) Isipholisi: ezona nxalenye ziphambili zesisipholisi sedayimani yocingo lwedayimani zi-surfactant, dispersant, defamagent and water and other components.I-liquid yokusika kunye nokusebenza okugqwesileyo inokumiswa kakuhle, ukusabalalisa kunye nokukwazi ukucoca lula.Ii-surfactants zihlala zineempawu ezingcono ze-hydrophilic, ekulula ukuzicoca kwinkqubo yokucoca i-silicon wafer.Ukuvuselela okuqhubekayo kunye nokujikeleza kwezi zongezo emanzini kuya kuvelisa inani elikhulu lamagwebu, okukhokelela ekunciphiseni kokuhamba okupholisayo, okuchaphazela ukusebenza kokupholisa, kunye ne-foam enzulu kunye neengxaki zokuphuphuma kwegwebu, eziya kuchaphazela kakhulu ukusetyenziswa.Ngoko ke, into yokupholisa idla ngokusetyenziswa kunye ne-arhente yokukhupha amagwebu.Ukuze kuqinisekiswe ukusebenza kwe-defoaming, i-silicone yendabuko kunye ne-polyether idla ngokuba yi-hydrophilic embi.I-solvent emanzini ilula kakhulu ukuyibhengeza kwaye ihlale phezu kwe-silicon wafer ekucoceni okulandelayo, okukhokelela kwingxaki yendawo emhlophe.Kwaye ayihambelani kakuhle namacandelo aphambili okupholisa, ke ngoko, kufuneka yenziwe ibe ngamacandelo amabini, amacandelo aphambili kunye neearhente zokupholisa amagwebu zongezwa emanzini, kwinkqubo yokusetyenziswa, ngokwemeko yegwebu, Ayikwazanga ukulawula ngokobungakanani Ukusetyenziswa kunye nedosi yeearhente ze-antifoam, Kunokuvumela ngokulula ukugqithiswa kwe-agent ye-anoaming, Ekhokelela ekwandeni kweentsalela ze-silicon wafer surface, Kukwanzima kakhulu ukusebenza, Nangona kunjalo, ngenxa yexabiso eliphantsi lezinto eziluhlaza kunye ne-arhente ehlanzayo. izixhobo, Ngoko ke, uninzi lwesipholisi sasekhaya zonke zisebenzisa le nkqubo yefomula;Esinye isixhobo sokupholisa sisebenzisa iarhente entsha yokukhupha amagwebu, inokuhambelana kakuhle nezinto eziphambili, Akukho zongezo, Inokulawula ngokufanelekileyo nangobungakanani ubungakanani bayo, inokuthintela ngokufanelekileyo ukusetyenziswa okugqithisileyo, Imithambo ikwalula kakhulu ukuyenza, Ngenkqubo yokucoca eyiyo, iintsalela zinokulawulwa ukuya kumanqanaba aphantsi kakhulu, eJapan kunye nabavelisi abambalwa basekhaya bamkela le nkqubo yefomyula, Nangona kunjalo, ngenxa yeendleko eziphezulu zempahla ekrwada, inzuzo yayo yexabiso ayicacanga.

2 ucingo sele luqalisile ukusika kumaleko werabha kunye nepleyiti ye-resin, Ekubeni iglu ye-silicon yeglu kunye nebhodi ye-resin zimbini iimveliso ze-epoxy resin, indawo yayo yokuthambisa iphakathi kwe-55 kunye ne-95 ℃, Ukuba indawo yokuthambisa yomaleko werabha okanye i-resin. ipleyiti iphantsi, inokutshisa ngokulula ngexesha lenkqubo yokusika kwaye ibangele ukuba ithambe kwaye inyibilike, incamathele kucingo lwentsimbi kunye nomphezulu we-silicon wafer surface, kubangela ukuba ukusika komgca wedayimani kunciphe, Okanye iipali zesilicon zifunyenwe kwaye Ichaphazeke ngentlaka, Yakuba incamathele, kunzima kakhulu ukuyihlamba, Ungcoliseko olunjalo luyenzeka kakhulu kufutshane nomphetho we-silicon wafer.

3 kunye nokusikwa kwentambo yedayimani yobungakanani be-silicon yomgubo kunye nobukhulu bukhokelela ekubeni kube lula ukubhengezwa kumphezulu we-silicon, yenza kube nzima ukuyicoca.Ke ngoko, qinisekisa uhlaziyo kunye nomgangatho wesipholisi kwaye unciphise umxholo ongumgubo kwisipholileyo.

(4) i-arhente yokucoca: usetyenziso lwangoku lwabavelisi bedayimane lokusika ucingo lwedayimane ikakhulu besebenzisa ukusika udaka ngaxeshanye, kusetyenziswa kakhulu ukusika udaka lwangaphambili, inkqubo yokucoca kunye nearhente yokucoca, njl. isethi epheleleyo yomgca, ukusika okupholileyo kunye nodaka kunomahluko omkhulu, ngoko ke inkqubo yokucoca ehambelanayo, idosi ye-ejenti yokucoca, i-formula, njl.I-arhente yokucoca ngumba obalulekileyo, i-agent yokuqala yokucoca ifomula ye-surfactant, i-alkalinity ayifanelekanga ukucoca i-wafer ye-diamond yokusika i-silicon, kufuneka ibe yeyomphezulu we-wafer ye-diamond ye-silicon, ukwakheka kunye neentsalela zomphezulu we-arhente yokucoca ekujoliswe kuyo, kwaye uthathe kunye inkqubo yokucoca.Njengoko kukhankanyiwe ngasentla, ukubunjwa kwe-agent ye-defoaming ayidingeki ekusikeni kodaka.

5

Ukunciphisa ingxaki yokwenza iinwele ze-velvet ezimhlophe zibonakala iingcebiso

(1) Ukusebenzisa isixhobo sokupholisa ngokusasazwa okulungileyo, kwaye isisipholisi siyafuneka ukuba sisebenzise i-arhente yokukhupha amagwebu eshiyekileyo ephantsi ukunciphisa intsalela yamalungu okupholisa kumphezulu we-silicon wafer;

(2) Sebenzisa i-glue efanelekileyo kunye ne-resin plate ukunciphisa ungcoliseko lwe-silicon wafer;

(3) Isipholisi sihlanjululwa ngamanzi acocekileyo ukuqinisekisa ukuba akukho lula ukungcola okushiyekileyo kumanzi asetyenzisiweyo;

4

(5) Sebenzisa umgca wedayimane opholileyo wenkqubo yokubuyisela kwi-intanethi ukunciphisa umxholo we-silicon powder kwinkqubo yokusika, ukuze ulawule ngokufanelekileyo intsalela ye-silicon powder kumphezulu we-silicon wafer we-wafer.Kwangaxeshanye, inokunyusa ukuphuculwa kobushushu bamanzi, ukuhamba kunye nexesha kwi-pre-washing, ukuqinisekisa ukuba i-silicon powder ihlanjwe ngexesha.

(6) Nje ukuba i-wafer ye-silicon ibekwe kwitafile yokucoca, kufuneka iphathwe ngokukhawuleza, kwaye igcine i-silicon wafer imanzi ngexesha lenkqubo yokucoca.

7(8) Kwinkqubo yokucoca i-silicon wafer, ixesha elivezwe emoyeni lingancitshiswa kangangoko kunokwenzeka ukuthintela ukuveliswa kweentyatyambo kumphezulu we-silicon wafer.

(9) Abasebenzi abacocayo abayi kuqhagamshelana ngokuthe ngqo nomphezulu we-silicon wafer ngexesha layo yonke inkqubo yokucoca, kwaye kufuneka banxibe iiglavu zerabha, ukuze bangavelisi ushicilelo lweminwe.

(10) Ngokubhekiselele [2], isiphelo sebhetri sisebenzisa i-hydrogen peroxide H2O2 + alkali NaOH inkqubo yokucoca ngokomlinganiselo wevolumu ye-1: 26 (isisombululo se-3% se-NaOH), esinokunciphisa ngokufanelekileyo ukuvela kwengxaki.Umgaqo wayo ufana nesisombululo se-SC1 sokucoca (esaziwa ngokuba yi-liquid 1) ye-semiconductor silicon wafer.Indlela yayo ephambili: ifilimu ye-oxidation kwi-silicon wafer surface yenziwe nge-oxidation ye-H2O2, ekhutshwe yi-NaOH, kwaye i-oxidation kunye ne-corrosion yenzeke ngokuphindaphindiweyo.Ngoko ke, iinqununu ezifakwe kwi-silicon powder, i-resin, isinyithi, njl.) nazo ziwela kwi-liquid yokucoca kunye ne-corrosion layer;ngenxa ye-oxidation ye-H2O2, i-organic matter kwi-wafer surface ichithwa kwi-CO2, i-H2O kwaye isuswe.Le nkqubo yokucoca ibe ngabavelisi be-silicon bafer basebenzisa le nkqubo ukucocwa kocingo lwedayimani lokusika i-silicon wafer ye-monocrystalline, i-silicon wafer yasekhaya kunye ne-Taiwan kunye nabanye abavelisi beebhetri basebenzise ibhetshi yezikhalazo ezimhlophe zevelvet.Kukho kwakhona abavelisi beebhetri basebenzise inkqubo efanayo yokucoca ivelvet kwangaphambili, kwakhona ukulawula ngokufanelekileyo ukubonakala kwevelvet emhlophe.Kuya kubonakala ukuba le nkqubo yokucoca yongezwa kwinkqubo yokucoca i-silicon wafer ukususa intsalela ye-silicon wafer ukuze isombulule ngokufanelekileyo ingxaki yeenwele ezimhlophe ekupheleni kwebhetri.

isiphelo

Okwangoku, ukusika ucingo lwedayimani kuye kwaba yeyona ndlela iphambili yetekhnoloji yokusikwa kwekristale enye, kodwa kwinkqubo yokukhuthaza ingxaki yokwenza i-velvet emhlophe ibikhathaza i-silicon wafer kunye nabavelisi bebhetri, okukhokelela kubenzi beebhetri kwisilicon yokusika i-diamond wire. I-wafer inokuxhathisa.Ngokusebenzisa uhlalutyo lokuthelekisa indawo emhlophe, ibangelwa ikakhulu yintsalela phezu komhlaba we-silicon wafer.Ukuze kuthintelwe ngcono ingxaki ye-silicon wafer kwiseli, eli phepha lihlalutya imithombo enokubakho yokungcoliseka komhlaba we-silicon wafer, kunye neengcebiso zokuphucula kunye nemilinganiselo kwimveliso.Ngokwenani, ummandla kunye nokuma kwamabala amhlophe, izizathu zingahlalutywa kwaye ziphuculwe.Kucetyiswa ngokukodwa ukusebenzisa i-hydrogen peroxide + inkqubo yokucoca i-alkali.Amava aphumeleleyo abonise ukuba anokuyithintela ngokufanelekileyo ingxaki yedayimani yocingo lokusika i-silicon wafer ukwenza i-velvet mhlophe, ukubhekisela kumashishini angaphakathi kunye nabavelisi.