iindaba

Iteknoloji yokusika intambo yedayimani ikwabizwa ngokuba yiteknoloji yokusika i-abrasive yokuhlanganisa. Kukusetyenziswa kwendlela yokubopha i-electroplating okanye i-resin bonding ye-diamond abrasive edibeneyo kumphezulu wentambo yentsimbi, intambo yedayimani isebenza ngokuthe ngqo kumphezulu wentonga ye-silicon okanye i-silicon ingot ukuvelisa ukugaya, ukufezekisa isiphumo sokusika. Ukusika intambo yedayimani kuneempawu zesantya sokusika esikhawulezayo, ukuchaneka okuphezulu kokusika kunye nokulahleka kwezinto eziphantsi.

Okwangoku, imakethi yekristale enye yokusika i-silicon wafer yedayimani iye yamkelwa ngokupheleleyo, kodwa ikwadibene nayo kwinkqubo yokukhuthaza, phakathi kwayo eyona ngxaki ixhaphakileyo yivelvet white. Ngenxa yoku, eli phepha ligxile kwindlela yokuthintela ingxaki ye-diamond wire cutting monocrystalline silicon wafer velvet white.

Inkqubo yokucoca i-wafer ye-silicon e-monocrystalline wire cutting kukususa i-wafer ye-silicon esikwe yisixhobo somatshini we-wire saw kwipleyiti ye-resin, ukususa umcu werabha, kunye nokucoca i-wafer ye-silicon. Izixhobo zokucoca ikakhulu ngumatshini wokucoca kwangaphambili (umatshini wokususa i-gumming) kunye nomatshini wokucoca. Inkqubo yokucoca ephambili yomatshini wokucoca kwangaphambili yile: ukondla-ukutshiza-ukutshiza-ukutshiza-ukutshiza-ukutshiza-ukucoca-ukucoca amanzi acocekileyo-ukuthambisa ngaphantsi. Inkqubo yokucoca ephambili yomatshini wokucoca yile: ukondla-ukutshiza-amanzi acocekileyo-ukutshiza-amanzi acocekileyo-ukutshiza-i-alkali yokutshiza-ukuhlamba-amanzi acocekileyo ukutshiza-ukucoca-amanzi acocekileyo-ukutshiza-ukukhupha amanzi kancinci (ukuphakamisa kancinci) -ukomisa-ukutyisa.

Umgaqo wokwenza i-velvet yekristale enye

I-wafer ye-silicon e-monocrystalline luphawu lokugqwala kwe-anisotropic kwe-wafer ye-silicon e-monocrystalline. Umgaqo wokusabela yile equation ye-chemical reaction elandelayo:

Si + 2NaOH + H2O = Na2SiO3 + 2H2↑

Ngokwenyani, inkqubo yokwakheka kwe-suede yile: Isisombululo se-NaOH sezinga lokugqwala elahlukileyo lomphezulu wekristale owahlukileyo, (100) isantya sokugqwala komphezulu kune (111), ngoko ke (100) kwi-monocrystalline silicon wafer emva kokugqwala kwe-anisotropic, ekugqibeleni yakhiwe kumphezulu we-(111) cone enamacala amane, oko kukuthi isakhiwo se-"pyramid" (njengoko kubonisiwe kumfanekiso 1). Emva kokuba isakhiwo senziwe, xa ukukhanya kusenzeka kwi-pyramid slope kwi-Angle ethile, ukukhanya kuya kubonakaliswa kwi-slope kwenye i-Angle, kwenze ukufunxwa kwesibini okanye ngaphezulu, ngaloo ndlela kunciphisa ukugqama kumphezulu we-silicon wafer, oko kukuthi, isiphumo se-light trap (jonga uMfanekiso 2). Okukhona ubukhulu kunye nokufana kwesakhiwo se-"pyramid" kubhetele, kokukhona isiphumo se-trap sibonakala ngakumbi, kwaye i-surface emitrate ye-silicon wafer isezantsi.

Umfanekiso 1: I-Micromorphology ye-monocrystalline silicon wafer emva kokuveliswa kwe-alkali

Umfanekiso 2: Umgaqo wendlela yokubeka isibatha sokukhanya kwisakhiwo "sepiramidi"

Uhlalutyo lwe-single crystal whitening

Ngokuskena imakroskopu ye-electron kwi-wafer ye-silicon emhlophe, kwafunyaniswa ukuba isakhiwo se-pyramid microstructure ye-wafer emhlophe kwindawo leyo sasingenziwe ngokusisiseko, kwaye umphezulu wawubonakala unomaleko we-"waxy" residue, ngelixa isakhiwo se-pyramid se-suede kwindawo emhlophe ye-wafer ye-silicon efanayo senziwe ngcono (jonga uMfanekiso 3). Ukuba kukho iintsalela kumphezulu we-wafer ye-silicon ye-monocrystalline, umphezulu uya kuba nobukhulu besakhiwo se-"pyramid" kunye nokuveliswa okufanayo kwaye isiphumo sendawo eqhelekileyo asanelanga, nto leyo ebangela ukuba i-residue velvet surface reflectivity iphezulu kunendawo eqhelekileyo, indawo enokukhanya okuphezulu xa kuthelekiswa nendawo eqhelekileyo kwimbonakalo ebonakaliswa njengomhlophe. Njengoko kunokubonwa kwimo yokusasazwa kwendawo emhlophe, ayiyomeko eqhelekileyo okanye eqhelekileyo kwindawo enkulu, kodwa kuphela kwiindawo zasekuhlaleni. Kufuneka ukuba ukungcola kwendawo kumphezulu we-wafer ye-silicon akukacocwa, okanye imeko yomphezulu we-wafer ye-silicon ibangelwa kukungcola okwesibini.

Umfanekiso 3: Uthelekiso lomahluko wesakhiwo sendawo kwii-wafers ze-silicon ezimhlophe zevelvet

Umphezulu we-wafer ye-silicon esikiweyo ngocingo lwedayimani uthambile ngakumbi kwaye umonakalo mncinane (njengoko kubonisiwe kuMfanekiso 4). Xa kuthelekiswa ne-wafer ye-silicon esikiweyo ngodaka, isantya sokuphendula komphezulu we-alkali kunye ne-wafer ye-silicon esikiweyo ngocingo lwedayimani sicotha kuneso se-wafer ye-silicon esikiweyo ngodaka lwedayimani, ngoko ke impembelelo yeentsalela zomphezulu kwisiphumo se-velvet icacile ngakumbi.

Umfanekiso 4: (A) I-micrograph yomphezulu we-mortar cut silicon wafer (B) i-micrograph yomphezulu we-diamond wire cut silicon wafer

Umthombo ophambili oseleyo womphezulu we-silicon wafer osikiweyo ngocingo lwedayimani

(1) Isicoci: izinto eziphambili zesicoci sokusika ucingo lwedayimani yi-surfactant, i-dispersant, i-defamagent kunye namanzi kunye nezinye izinto. Ulwelo lokusika olusebenza kakuhle lunokumiswa okuhle, ukusasazwa kunye nokukwazi ukucoca ngokulula. Ii-surfactants zihlala zineempawu ezingcono ze-hydrophilic, okulula ukuzicoca kwinkqubo yokucoca i-silicon wafer. Ukuxuba okuqhubekayo kunye nokujikeleza kwezi zongezo emanzini kuya kuvelisa inani elikhulu le-foam, okubangela ukwehla kokuhamba kwe-coolant, okuchaphazela ukusebenza kokupholisa, kunye neengxaki ezinkulu ze-foam kunye nokugcwala kwe-foam, okuya kuchaphazela kakhulu ukusetyenziswa. Ke ngoko, isicoci sihlala sisetyenziswa kunye ne-agent ye-defoam. Ukuqinisekisa ukusebenza kwe-defoam, i-silicone yendabuko kunye ne-polyether zihlala zingenamanzi kakuhle. Isinyibilikisi emanzini kulula kakhulu ukusifunxa kwaye sihlala kumphezulu we-silicon wafer ekucoceni okulandelayo, okubangela ingxaki yebala elimhlophe. Kwaye ayihambelani kakuhle nezinto eziphambili ze-coolant, Ke ngoko, kufuneka yenziwe ibe ziinxalenye ezimbini, Izinto eziphambili kunye neearhente zokuxovula zongezwa emanzini, Kwinkqubo yokusetyenziswa, ngokwemeko ye-foam, Ayikwazi ukulawula ukusetyenziswa kunye nomthamo weearhente ze-antifoam ngobuninzi, Ingavumela ngokulula ukuba ii-arhente ze-anoming zigqithise kakhulu, Okukhokelela ekwandeni kweentsalela zomphezulu we-silicon wafer, Kwakhona kulula ukuyisebenzisa, Nangona kunjalo, ngenxa yexabiso eliphantsi lezinto eziluhlaza kunye nezinto eziluhlaza ze-agent ye-defoam, Ke ngoko, uninzi lwe-coolant yasekhaya zonke zisebenzisa le nkqubo yefomula; Esinye i-coolant sisebenzisa i-arhente entsha yokuxovula, Ingahambelana kakuhle nezinto eziphambili, Akukho zongezo, Ingalawula ngokufanelekileyo nangobuninzi ubungakanani bayo, Ingathintela ngokufanelekileyo ukusetyenziswa ngokugqithiseleyo, Imithambo ikwalula kakhulu ukuyenza, Ngenkqubo efanelekileyo yokucoca, Iintsalela zayo zinokulawulwa ukuya kumanqanaba aphantsi kakhulu, EJapan kunye nabavelisi abambalwa basekhaya bayamkela le nkqubo yefomula, Nangona kunjalo, ngenxa yexabiso layo eliphezulu lezinto eziluhlaza, Inzuzo yayo yexabiso ayibonakali.

(2) Uhlobo lweglue kunye neresin: kwinqanaba lokugqibela lenkqubo yokusika ucingo lwedayimani, I-silicon wafer ekufutshane nesiphelo esingenayo isikiwe kwangaphambili, I-silicon wafer ekupheleni kokuphuma ayikasikwa, Ucingo lwedayimani olusikiweyo kwangoko luqalile ukusika ukuya kumaleko werabha kunye nepleyiti yeresin, Ekubeni iglu yentonga yesilicon kunye nebhodi yeresin zombini ziyimveliso ye-epoxy resin, Inqanaba layo lokuthambisa ngokusisiseko liphakathi kwama-55 nama-95℃, Ukuba indawo yokuthambisa yomaleko werabha okanye ipleyiti yeresin iphantsi, inokufudumala ngokulula ngexesha lenkqubo yokusika kwaye ibangele ukuba ithambe kwaye inyibilike, Iqhotyoshelwe kwintambo yentsimbi kunye nomphezulu we-silicon wafer, Ibangela ukuba amandla okusika omgca wedayimani anciphe, Okanye ii-silicon wafers zifunyenwe kwaye zidaywe yiresin, Nje ukuba ziqhotyoshelwe, kunzima kakhulu ukuzihlamba. Ungcoliseko olunjalo lwenzeka kakhulu kufutshane nomphetho womphetho we-silicon wafer.

(3) umgubo we-silicon: kwinkqubo yokusika ucingo lwedayimani iya kuvelisa umgubo we-silicon omninzi, xa ukusika kuqhubeka, umxholo womgubo we-coolant we-mortar uya kuba phezulu ngakumbi, xa umgubo umkhulu ngokwaneleyo, uya kunamathela kumphezulu we-silicon, kwaye ukunqunyulwa kobukhulu kunye nobukhulu bomgubo we-silicon wire wire kukhokelela ekubeni kube lula ukuwufunxa kumphezulu we-silicon, kwenze kube nzima ukuwucoca. Ke ngoko, qinisekisa uhlaziyo kunye nomgangatho we-coolant kwaye unciphise umxholo womgubo kwi-coolant.

(4) iarhente yokucoca: Ukusetyenziswa kwangoku kwabavelisi bokusika iingcingo zedayimani ikakhulu basebenzisa ukusika isinyithi ngaxeshanye, uninzi lwabo basebenzisa ukuhlamba kwangaphambili kwesinyithi, inkqubo yokucoca kunye nearhente yokucoca, njl. njl., iteknoloji yokusika isinyithi sedayimani enye evela kwindlela yokusika, yenza iseti epheleleyo yomgca, ukusika isinyithi kunye nesinyithi kunomahluko omkhulu, ngoko ke inkqubo yokucoca ehambelanayo, umthamo wearhente yokucoca, ifomula, njl. kufuneka ibe yeyokusika isinyithi sedayimani yenza uhlengahlengiso oluhambelanayo. Iarhente yokucoca yinkalo ebalulekileyo, ifomyula yearhente yokucoca yokuqala, i-alkalinity ayifanelekanga ukucoca i-wafer yesinyithi yokusika isinyithi sedayimani, kufuneka ibe yeyomphezulu we-wafer yesinyithi sedayimani, ukwakheka kunye neentsalela zomphezulu wearhente yokucoca ekujoliswe kuyo, kwaye ithathelwe nenkqubo yokucoca. Njengoko kukhankanyiwe ngasentla, ukwakheka kwe-arhente yokucoca akufuneki ekusikeni isinyithi.

(5) Amanzi: ukusika ucingo lwedayimani, ukuhlamba kwangaphambili kunye nokucoca amanzi agqithisileyo aqulethe ukungcola, anokutsalwa kumphezulu we-silicon wafer.

Nciphisa ingxaki yokwenza iinwele zevelvet zibe mhlophe, cebisa

(1) Ukusebenzisa i-coolant enokusasazwa kakuhle, kwaye i-coolant kufuneka isebenzise i-arhente yokucola intsalela ephantsi ukunciphisa intsalela yezinto ezipholileyo kumphezulu we-silicon wafer;

(2) Sebenzisa iglu efanelekileyo kunye nepleyiti yeresin ukunciphisa ungcoliseko lwe-silicon wafer;

(3) Isibandisi sixutywa ngamanzi acocekileyo ukuqinisekisa ukuba akukho kungcola okulula okushiyekileyo emanzini asetyenzisiweyo;

(4) Ukuze ufumane umphezulu we-wafer ye-silicon esikiweyo ngocingo lwedayimani, sebenzisa i-agent yokucoca efanelekileyo ngakumbi;

(5) Sebenzisa inkqubo yokubuyisela ubushushu ye-diamond line coolant online ukunciphisa umxholo we-silicon powder kwinkqubo yokusika, ukuze ulawule ngokufanelekileyo intsalela ye-silicon powder kumphezulu we-silicon wafer we-wafer. Kwangaxeshanye, inokunyusa ukuphuculwa kobushushu bamanzi, ukuhamba kunye nexesha ekuhlanjweni kwangaphambili, ukuqinisekisa ukuba i-silicon powder ihlanjwa ngexesha elifanelekileyo.

(6) Nje ukuba i-silicon wafer ibekwe etafileni yokucoca, kufuneka icocwe ngoko nangoko, kwaye igcine i-silicon wafer imanzi ngexesha lonke lokucoca.

(7) I-silicon wafer igcina umphezulu umanzi ngexesha lokukhupha i-gumming, kwaye ayinakomisa ngokwendalo. (8) Kwinkqubo yokucoca i-silicon wafer, ixesha elivezwa emoyeni lingancitshiswa kangangoko kunokwenzeka ukuthintela ukuveliswa kweentyatyambo kumphezulu we-silicon wafer.

(9) Abasebenzi bokucoca akufuneki banxibe iiglavu zerabha ngqo kumphezulu we-silicon wafer ngexesha lonke lokucoca, kwaye kufuneka banxibe iiglavu zerabha, ukuze bangabonakalisi ukuprintwa kweminwe.

(10) Kwisalathiso [2], isiphelo sebhetri sisebenzisa inkqubo yokucoca i-hydrogen peroxide H2O2 + alkali NaOH ngokwemilinganiselo yevolumu ye-1:26 (3%NaOH solution), enokunciphisa ngempumelelo ukwenzeka kwengxaki. Umgaqo wayo ufana nesisombululo sokucoca se-SC1 (esaziwa ngokuba lulwelo 1) lwe-semiconductor silicon wafer. Indlela yayo ephambili: ifilimu ye-oxidation kumphezulu we-silicon wafer yenziwa yi-oxidation ye-H2O2, egqwaliswe yi-NaOH, kwaye i-oxidation kunye ne-corrosion zenzeka ngokuphindaphindiweyo. Ke ngoko, amasuntswana anamathele kumgubo we-silicon, i-resin, isinyithi, njl.njl.) nawo awela kulwelo lokucoca ngomaleko wokugqwala; ngenxa ye-oxidation ye-H2O2, izinto eziphilayo kumphezulu we-wafer ziyabola zibe yi-CO2, i-H2O kwaye zisuswe. Le nkqubo yokucoca iye yasetyenziswa ngabavelisi be-silicon wafer abasebenzisa le nkqubo ukucubungula ukucoca i-diamond wire cutting monocrystalline silicon wafer, i-silicon wafer kwi-home and Taiwan kunye nabanye abavelisi bebhetri batch ukusetyenziswa kwezikhalazo zeengxaki ezimhlophe ze-velvet. Kukwakho nabavelisi bebhetri abasebenzise inkqubo efanayo ye-velvet pre-cleaning, kwaye balawula ngempumelelo ukubonakala kwe-velvet white. Kuyabonakala ukuba le nkqubo yokucoca yongezwa kwinkqubo yokucoca i-silicon wafer ukususa intsalela ye-silicon wafer ukuze kusonjululwe ngempumelelo ingxaki yeenwele ezimhlophe ekupheleni kwebhetri.

isiphelo

Okwangoku, ukusika intambo yedayimani kuye kwaba yiteknoloji ephambili yokucubungula kwicandelo lokusika ikristale enye, kodwa kwinkqubo yokukhuthaza ingxaki yokwenza i-velvet emhlophe ibikhathaza abavelisi be-silicon wafer kunye neebhetri, nto leyo ekhokelela ekubeni abavelisi bebhetri banqumle intambo yedayimani, i-silicon wafer inokumelana okuthile. Ngokusebenzisa uhlalutyo lokuthelekisa indawo emhlophe, oku kubangelwa ikakhulu yintsalela kumphezulu we-silicon wafer. Ukuze kuthintelwe ngcono ingxaki ye-silicon wafer kwiseli, eli phepha lihlalutya imithombo enokubakho yokungcoliswa komphezulu we-silicon wafer, kunye neengcebiso zokuphucula kunye namanyathelo kwimveliso. Ngokwenani, ummandla kunye nemilo yamabala amhlophe, izizathu zinokuhlalutywa kwaye ziphuculwe. Kucetyiswa ngokukodwa ukusebenzisa i-hydrogen peroxide + inkqubo yokucoca i-alkali. Amava aphumeleleyo abonakalise ukuba inokuthintela ngempumelelo ingxaki yokusika intambo yedayimani i-silicon wafer yokwenza i-velvet whitening, ukuze kubhekiswe kubantu abangaphakathi kunye nabavelisi ngokubanzi.